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Epitaxial Growth of In(1-x)Al(x)P On GaAs Substrate

IP.com Disclosure Number: IPCOM000090381D
Original Publication Date: 1969-Apr-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Woodall, JM: AUTHOR

Abstract

This procedure is for growing an epitaxial layer of In(1-x)Al(x)P on a GaAs substrate by liquid phase epitaxy. A chemically different substrate is used for growing an epitaxial layer, i.e., GaAs substrate for In(1-x)Al(x)P layer. The In(1-x)Al(x)P system is an electroluminescent material at a wavelength corresponding to green light, where the eye response is the most sensitive. An exemplary procedure for growing the layer is as follows. prepare <111> GaAs substrate by lapping flat with 5mu Al(2)O(3) powder followed by a 1 min. etch in 1:3:4, HF:HNO(3):H(2)O. Prepare a melt of In, Al, and P plus dopants if required, illustratively 15 gms. In, 0.066 - 0.200 gms. Al, .005 - .010 gms. Te, 0.100 gms. Zn, and 3 gms. InP.

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Epitaxial Growth of In(1-x)Al(x)P On GaAs Substrate

This procedure is for growing an epitaxial layer of In(1-x)Al(x)P on a GaAs substrate by liquid phase epitaxy. A chemically different substrate is used for growing an epitaxial layer, i.e., GaAs substrate for In(1-x)Al(x)P layer. The In(1- x)Al(x)P system is an electroluminescent material at a wavelength corresponding to green light, where the eye response is the most sensitive. An exemplary procedure for growing the layer is as follows. prepare <111> GaAs substrate by lapping flat with 5mu Al(2)O(3) powder followed by a 1 min. etch in 1:3:4, HF:HNO(3):H(2)O. Prepare a melt of In, Al, and P plus dopants if required, illustratively 15 gms. In, 0.066 - 0.200 gms. Al, .005 - .010 gms. Te, 0.100 gms. Zn, and 3 gms. InP. Grow the layer by using liquid phase epitaxy using a temperature range of 900 degrees C to 800 degrees C.

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