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Electroluminescent Diode

IP.com Disclosure Number: IPCOM000090385D
Original Publication Date: 1969-Apr-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 41K

Publishing Venue

IBM

Related People

Marinace, JC: AUTHOR

Abstract

The gallium arsenide planar electroluminescent diode has its PN junction 10 formed very close to upper surface 12 from which the light is emitted. The structure is fabricated so that ohmic contacts 14 and 16 to the P and N regions are not above the junction. Essentially all of the light produced by current across the junction passes through surface 12 of the GaAs on which there is a layer 13 of SiO(2). Through exaggerated in size in the drawing, portion 10A of junction 10 is much shorter than is the case if it were extended in a straight line beneath contact 14. By controlling the fabrication process, junction 10 can be made sufficiently shallow that an appreciable portion of the recombination radiation is produced within a wavelength of surface 12.

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Electroluminescent Diode

The gallium arsenide planar electroluminescent diode has its PN junction 10 formed very close to upper surface 12 from which the light is emitted. The structure is fabricated so that ohmic contacts 14 and 16 to the P and N regions are not above the junction.

Essentially all of the light produced by current across the junction passes through surface 12 of the GaAs on which there is a layer 13 of SiO(2). Through exaggerated in size in the drawing, portion 10A of junction 10 is much shorter than is the case if it were extended in a straight line beneath contact 14. By controlling the fabrication process, junction 10 can be made sufficiently shallow that an appreciable portion of the recombination radiation is produced within a wavelength of surface 12. This not only reduces absorption losses, but can allow for more efficient coupling of the radiation out of the GaAs body. The opposite surface of the device is provided with reflective coating 18 separated from the body of semiconductor material by a layer of transparent insulating material 20.

The device is formed out of a larger body of semiconductor material which is initially much thicker. The junction profile is provided by diffusing zinc into N-type GaAs through a masking layer of SiO(2) to obtain a shallow diffusion in the material beneath the SiO(2). The deeper zinc, P-type diffusion at the left is produced by diffusing through a slot in the SiO(2). Then through a series of steps, the...