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Ohmic Contact to Gallium Phosphide

IP.com Disclosure Number: IPCOM000090388D
Original Publication Date: 1969-Apr-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Garrison, V: AUTHOR

Abstract

Ohmic contacts are made to a PN junction diode formed of gallium phosphide which is doped with zinc and oxygen to produce red light. Ohmic contact is made to the P regions of the diode using a eutectic which contains, by weight, 88% gold and 12% germanium. This eutectic melts at 350 degrees C allowing an ohmic contact to be made at a low temperature which does not affect the properties of the doped gallium phosphide. The same eutectic can also be used to make an ohmic contact to the N region of the gallium phosphide.

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Ohmic Contact to Gallium Phosphide

Ohmic contacts are made to a PN junction diode formed of gallium phosphide which is doped with zinc and oxygen to produce red light. Ohmic contact is made to the P regions of the diode using a eutectic which contains, by weight, 88% gold and 12% germanium. This eutectic melts at 350 degrees C allowing an ohmic contact to be made at a low temperature which does not affect the properties of the doped gallium phosphide. The same eutectic can also be used to make an ohmic contact to the N region of the gallium phosphide.

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