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Removal of N(2) from GaP Synthesized from PH(3) and Ga

IP.com Disclosure Number: IPCOM000090389D
Original Publication Date: 1969-Apr-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Plaskett, TS: AUTHOR [+2]

Abstract

When single crystals of gallium phosphide are synthesized from gallium and phosphorous, the crystals often contain nitrogen as an impurity. Nitrogen can, in some cases, have a bad effect on luminescent characteristics by producing an unwanted emission in the green. This is avoided by adding boron to the gallium solution prior to synthesis to produce boron nitride which slags to the surface. The gallium phosphide thus prepared is essentially free of nitrogen.

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Removal of N(2) from GaP Synthesized from PH(3) and Ga

When single crystals of gallium phosphide are synthesized from gallium and phosphorous, the crystals often contain nitrogen as an impurity. Nitrogen can, in some cases, have a bad effect on luminescent characteristics by producing an unwanted emission in the green. This is avoided by adding boron to the gallium solution prior to synthesis to produce boron nitride which slags to the surface. The gallium phosphide thus prepared is essentially free of nitrogen.

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