Browse Prior Art Database

Memory System

IP.com Disclosure Number: IPCOM000090460D
Original Publication Date: 1969-Apr-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 3 page(s) / 47K

Publishing Venue

IBM

Related People

Gruenberg, EL: AUTHOR

Abstract

In this memory system, random access of a memory location is achieved by establishing a singing condition between a control location and memory location. The singing condition occurs between two terminals via electromagnetic energy propagation between them when the gain exceeds the loss in the included loop and the terminals are tuned responsively. By the use of singing, the memory system is organized without direct conductive connections from control location to address location.

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Memory System

In this memory system, random access of a memory location is achieved by establishing a singing condition between a control location and memory location. The singing condition occurs between two terminals via electromagnetic energy propagation between them when the gain exceeds the loss in the included loop and the terminals are tuned responsively. By the use of singing, the memory system is organized without direct conductive connections from control location to address location.

The memory system is addressable in a random access fashion. An oscillatory signal builds up between two given points a and b separated by a distance R one of which contains sufficient gain to overcome the loss suffered by a wave travelling between them. The frequency of this oscillation can have many modes. The lowest frequency is f = C/2R = 1/T where C = velocity of light and T = round trip transit time of electromagnetic energy. With filter F inserted at b, the oscillation frequency is limited to f if filter F is limited to f+/-delta where Delta is a fraction of f. If a similar filter tuned to f2+/-Delta is placed at R2 an oscillation at frequency f2 is possible between a and c. With a tunable filter f+/- Delta included at a, oscillation frequency which occurs is limited to the coincidence of f with F or F2. Further, F does not oscillate when F2 frequency F2 is possible between a and c. With a tunable filter f+/-Delta included at a, oscillation frequency which occurs is limited to the coincidence of f with F or F2. Further, F does not oscillate when F2 is tuned and vice versa. Thus, the filter at a can select or address uniquely either b or c or n other addresses properly. The oscillation at b or c can cause a current to flow which can be used to operate a switch or gate as in drawing B.

Physical wiring is not required between points a, b, c. Drawing C shows that b can be relocated on a circle of radius R from a, and c on any point on a circle of radius R2.

Representative parameters of the memory system are:

R T f ft inches mu sec mc 5 60 .01 100
.5 6 .001 1000
.25 3 .0005 2000
.05 0.6 .0001 10000. A change of 10 MHz corresponds to a change of 30 mils in the region between 1000 and 2000 MHz. Between 9000 and 10,000 mc drawing D shows the way distance is generally related to frequency. Air dielectric is assumed.

The foregoing describes a one-dimensional selection of an element. Two- dimensional or three-dimensional selection is obtained by the technique of drawing E. For two-dimensions, the same element Oij of a given array is addressed from two access points, x and y. These points are located approximately at right angles to the array and at a distance far enough away so that approximate arcs of circles can be drawn with x or y as center and intersecting any array element with straight lines. This is convenient for a square or rectangular. Then line ii' represents the locus of points that oscillate with

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