Browse Prior Art Database

Low Charge Silicon Surfaces for FET Fabrication

IP.com Disclosure Number: IPCOM000090497D
Original Publication Date: 1969-May-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Balk, P: AUTHOR [+2]

Abstract

Silicon samples, cut normal to the <711> and <810> directions, exhibit very low surface charge upon oxidation in dry O(2). The tolerance in the measured orientation of the samples is +/- 1 degree. Thus, such surfaces are suitable for FET device fabrication.

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Low Charge Silicon Surfaces for FET Fabrication

Silicon samples, cut normal to the <711> and <810> directions, exhibit very low surface charge upon oxidation in dry O(2). The tolerance in the measured orientation of the samples is +/- 1 degree. Thus, such surfaces are suitable for FET device fabrication.

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