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Liquid Phase Epitaxial Growth of Al(x)Ga(1-x)As(y)P(1-y)

IP.com Disclosure Number: IPCOM000090498D
Original Publication Date: 1969-May-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Shih, KK: AUTHOR [+2]

Abstract

The quaternary composition Al(x)Ga(1-x)As(y)P(1-x) is grown on GaAs and GaP substrates by liquid phase epitaxy. A melt is charged with Ga, Al, GaAs and CaP. The charge composition is near the liquidus line, i.e., 20 grams of gallium, 0.05 grams of aluminum, 2.5 grams gallium arsenide and 0.075 grams of gallium phosphide at 955 degrees C. The quarternary composition is grown at a temperature in the range of about 965 degrees C to 860 degrees C. Electroluminescent diodes can be prepared from this composition. The composition emits light in the visible spectrum. The maximum direct transition energy gap for this alloy system can reach 2.25eV for x approx.=0.5 y approx=.0.5 which is of importance for applications of light-emitting devices.

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Liquid Phase Epitaxial Growth of Al(x)Ga(1-x)As(y)P(1-y)

The quaternary composition Al(x)Ga(1-x)As(y)P(1-x) is grown on GaAs and GaP substrates by liquid phase epitaxy. A melt is charged with Ga, Al, GaAs and CaP. The charge composition is near the liquidus line, i.e., 20 grams of gallium,
0.05 grams of aluminum, 2.5 grams gallium arsenide and 0.075 grams of gallium phosphide at 955 degrees C. The quarternary composition is grown at a temperature in the range of about 965 degrees C to 860 degrees C. Electroluminescent diodes can be prepared from this composition. The composition emits light in the visible spectrum. The maximum direct transition energy gap for this alloy system can reach 2.25eV for x approx.=0.5 y approx=.0.5 which is of importance for applications of light-emitting devices.

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