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Preparation of Boron and Boron Phosphide from Ga Solutions

IP.com Disclosure Number: IPCOM000090528D
Original Publication Date: 1969-May-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Chicotka, RJ: AUTHOR [+2]

Abstract

High purity boron or boron and phosphorus and Ga are heated in a sealed vessel at a temperature of about 1450 degrees C. The reaction mixture is maintained at this temperature for a time sufficient to cause a reaction between the reactants and is then slowly cooled. The formation of boron phosphide results from the immiscibility of the gallium phosphide and boron phosphide in crystalline form. This method of growing boron phosphide crystals is more advantageous than the methods of growing boron phosphide crystals in fluxes of nickel or other transition metal elements. This is because gallium is isoelectronic to boron and trace amounts of gallium in boron phosphide do not have any deleterious effect on the electrical properties of boron phosphide.

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Preparation of Boron and Boron Phosphide from Ga Solutions

High purity boron or boron and phosphorus and Ga are heated in a sealed vessel at a temperature of about 1450 degrees C. The reaction mixture is maintained at this temperature for a time sufficient to cause a reaction between the reactants and is then slowly cooled. The formation of boron phosphide results from the immiscibility of the gallium phosphide and boron phosphide in crystalline form. This method of growing boron phosphide crystals is more advantageous than the methods of growing boron phosphide crystals in fluxes of nickel or other transition metal elements. This is because gallium is isoelectronic to boron and trace amounts of gallium in boron phosphide do not have any deleterious effect on the electrical properties of boron phosphide.

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