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Selective Etch for Platinum Particular to Platinum Silicide Contact Metallurgy

IP.com Disclosure Number: IPCOM000090594D
Original Publication Date: 1969-May-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Cuomo, JJ: AUTHOR [+2]

Abstract

In etchant for etching platinum in the presence of platinum silicide and silicon dioxide is provided. The etchant comprises one part of HCl and three parts of H(2)O(2). The etchant selectively etches platinum without similarly attacking silicon dioxide or platinum silicide.

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Selective Etch for Platinum Particular to Platinum Silicide Contact Metallurgy

In etchant for etching platinum in the presence of platinum silicide and silicon dioxide is provided. The etchant comprises one part of HCl and three parts of H(2)O(2). The etchant selectively etches platinum without similarly attacking silicon dioxide or platinum silicide.

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