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Determining Diffused Impurity Profiles Using Master Curves

IP.com Disclosure Number: IPCOM000090617D
Original Publication Date: 1969-Jun-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 38K

Publishing Venue

IBM

Related People

Gardner, EE: AUTHOR [+3]

Abstract

This method determines corrected impurity profiles of semiconductors by the spreading resistance technique. It is useful in various applications involving standardized semiconductor devices.

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Determining Diffused Impurity Profiles Using Master Curves

This method determines corrected impurity profiles of semiconductors by the spreading resistance technique. It is useful in various applications involving standardized semiconductor devices.

In spreading resistivity determinations, the semiconductor is beveled, exposing the diffused region. A current is established in the device between two current probes. A voltage probe in contact with the device measures the voltage drop between the voltage probe and one of the current probes. Knowing the current, voltage, and the size of the probe permits evaluation of the apparent resistivity of the material at the point of contact of the voltage probe. Apparent resistivity determinations are taken at spaced intervals in the semiconductor region of interest. These determined values of resistivity must be corrected to compensate for resistivity variations in the immediate region of the probe and also PN junctions which distort the voltage and current values. This correction gives the actual resistivity.

In this method, a family of curves 2...4,depicting actual impurity concentration versus distance, which deviate from the ideal curve 1 within a normal error distribution, is prepared as in A. A second set of corresponding curves of spreading resistance versus distance, depicting the corresponding apparent impurity concentration of each of the drawing A curves, is prepared as in B.

This transformation can be accomplishe...