Browse Prior Art Database

Fabricating Schottky Barrier Photodiodes and Diode Arrays

IP.com Disclosure Number: IPCOM000090618D
Original Publication Date: 1969-Jun-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 81K

Publishing Venue

IBM

Related People

Anantha, NG: AUTHOR [+2]

Abstract

This method results in a monolithic semiconductor structure having a Schottky barrier photodiode and a conventional Schottky barrier diode utilizing the same basic process steps.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 84% of the total text.

Page 1 of 2

Fabricating Schottky Barrier Photodiodes and Diode Arrays

This method results in a monolithic semiconductor structure having a Schottky barrier photodiode and a conventional Schottky barrier diode utilizing the same basic process steps.

An SiO(2) layer 10 is deposited or grown on P- wafer 12 having epitaxial layer 14 and buried subcollector region 16. The diode array to be fabricated can be isolated by diffusions 16 as in A. Opening 18 is made in layer 10 and a thick layer of molybdenum 20 is deposited over the surface of layer 10 in contact hole 18 as in B. A second opening 22 is then made through layers 10 and 20 and a thin film of gold 24 is deposited over the surface. Layer metallurgy 20 and 24 is then etched as in C. The gold silicon interface forms a-Schottky barrier photodiode 26 since the film of gold is thin enough to pass incident radiation without much absorption. The molybdenum-silicon interface forms a conventional Schottky barrier diode 28. Good contact can be made with photodiode 26 since the gold in layer 24 is in intimate contact with layer 20.

A Schottky barrier photodiode array produced by this method gives higher detection efficiency since photon flux is collected near the surface without absorption within the bulk of the semiconductor material. Response time and recovery of the Schottky barrier diode is faster due to the majority carrier flow. High reverse voltage capability with proper concentration of impurity near the junction gives enough...