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Method of Determining Semiconductor Impurity Profiles

IP.com Disclosure Number: IPCOM000090619D
Original Publication Date: 1969-Jun-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 24K

Publishing Venue

IBM

Related People

Gardner, EE: AUTHOR [+3]

Abstract

This method is for determining corrected impurity profiles of semiconductors by the spreading resistance technique. It is particularly useful in applications involving standardized semiconductor devices.

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Method of Determining Semiconductor Impurity Profiles

This method is for determining corrected impurity profiles of semiconductors by the spreading resistance technique. It is particularly useful in applications involving standardized semiconductor devices.

In spreading resistivity determinations, the semiconductor is beveled, exposing the diffused region. A current is established in the device between two current probes. A voltage probe in contact with the device measures the voltage drop between the voltage probe and one other current probe. Knowing the current, voltage, and the size of the probe permits evaluation of the apparent resistivity of the material at the point of contact of the voltage probe. Apparent resistivity determinations are taken at spaced intervals in the semiconductor region of interest. These determined values of resistivity are corrected to compensate for resistivity variations in the intermediate region of the probe and also PN junctions which distort the voltage and current values.

In this method, the device is beveled and-two spreading resistance determinations made, one at the surface and the other at the junction. The values of spreading resistance are then converted to resistivity through a calibration curve set forth in publications mentioned below. The resistivity of the two determinations is then converted to apparent impurity concentration utilizing Irvin's curve.

The apparent impurity concentration values 2 and 4 are then plott...