Dismiss
InnovationQ will be updated on Sunday, Oct. 22, from 10am ET - noon. You may experience brief service interruptions during that time.
Browse Prior Art Database

Bulk Resistors for Integrated Circuits

IP.com Disclosure Number: IPCOM000090623D
Original Publication Date: 1969-Jun-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 60K

Publishing Venue

IBM

Related People

Chang, JJ: AUTHOR [+2]

Abstract

There is shown in drawing A, a planar view, and drawing B, a vertical cross-sectional view, of a resistor structure. Such is obtained by diffusing N+ contacts through the thickness of an N-type epitaxial layer. The epitaxial layer is grown upon a P- substrate which has N+ diffusions in it at the suitable positions so that the N+ contacts subsequently merge as shown. The resistor is isolated by P+ junction isolation. The bulk resistivity of the epitaxial region between the two N+ diffused contacts provides more uniform high resistors. With this structure, current crowding is also avoided.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Bulk Resistors for Integrated Circuits

There is shown in drawing A, a planar view, and drawing B, a vertical cross- sectional view, of a resistor structure. Such is obtained by diffusing N+ contacts through the thickness of an N-type epitaxial layer. The epitaxial layer is grown upon a P- substrate which has N+ diffusions in it at the suitable positions so that the N+ contacts subsequently merge as shown. The resistor is isolated by P+ junction isolation. The bulk resistivity of the epitaxial region between the two N+ diffused contacts provides more uniform high resistors. With this structure, current crowding is also avoided.

1

Page 2 of 2

2

[This page contains 3 pictures or other non-text objects]