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Button Geometry for Transistors

IP.com Disclosure Number: IPCOM000090625D
Original Publication Date: 1969-Jun-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 44K

Publishing Venue

IBM

Related People

Castrucci, PP: AUTHOR [+3]

Abstract

This button-shaped geometry allows the use of ball terminals on transistors, employing other features, without the need to use of double-level metallurgy. Ball terminal 2 is the base terminal and is soldered to base electrode metallization 4. The latter extends over the entire periphery of the base collector junction, shown as dotted line 6. Extended electrode 4 aids in preventing low voltage surface breakdown. Ball terminal 8 is the emitter terminal and is soldered to emitter electrode metallization 10. This rest directly on silicon which provides good heat conductivity from the high-current emitter electrode. Diffused guard ring 12 and field relief electrode 14 encircle the entire active area to provide stable reverse characteristics.

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Button Geometry for Transistors

This button-shaped geometry allows the use of ball terminals on transistors, employing other features, without the need to use of double-level metallurgy. Ball terminal 2 is the base terminal and is soldered to base electrode metallization 4. The latter extends over the entire periphery of the base collector junction, shown as dotted line 6. Extended electrode 4 aids in preventing low voltage surface breakdown. Ball terminal 8 is the emitter terminal and is soldered to emitter electrode metallization 10. This rest directly on silicon which provides good heat conductivity from the high-current emitter electrode. Diffused guard ring 12 and field relief electrode 14 encircle the entire active area to provide stable reverse characteristics. All electrode metallization lies in one plane and is insulated from the semiconductor material by oxide layer 16 except where ohmic contacts are placed.

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