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Impurity Profile Control During Ion Implantation

IP.com Disclosure Number: IPCOM000090629D
Original Publication Date: 1969-Jun-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Duffy, MC: AUTHOR [+3]

Abstract

Control of an ion-implanted impurity-concentration profile in a semiconductor is improved by varying the ion beam's angle of incidence during implantation. An ion's energy and its angle of incidence determine its depth of penetration into the semiconductor. The desired profile is obtained by varying the ion beam's angle of incidence and the energy of the ions. When the angle of incidence is changed continuously the rate profile of the angle change and the ion energies are determined from the desired profile. When step changes are made in the angle, the sizes of the steps, the time between steps, and the ion energy are determined from the desired profile.

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Impurity Profile Control During Ion Implantation

Control of an ion-implanted impurity-concentration profile in a semiconductor is improved by varying the ion beam's angle of incidence during implantation. An ion's energy and its angle of incidence determine its depth of penetration into the semiconductor. The desired profile is obtained by varying the ion beam's angle of incidence and the energy of the ions. When the angle of incidence is changed continuously the rate profile of the angle change and the ion energies are determined from the desired profile. When step changes are made in the angle, the sizes of the steps, the time between steps, and the ion energy are determined from the desired profile.

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