Browse Prior Art Database

Photodetector Arrays Using Beam Lead Interconnection Technology

IP.com Disclosure Number: IPCOM000090636D
Original Publication Date: 1969-Jun-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 69K

Publishing Venue

IBM

Related People

Akmenkalns, IG: AUTHOR [+2]

Abstract

This technique is for interconnecting photodetectors in an array by beam lead technology. Drawing A is a partial section of a substrate carrier with two levels of metallization. The square areas 1 serve as pads for bonding purposes. Drawing B is a cross-section taken along B-B in drawing A. Drawing C shows a cell arrangement for a detector array comprised essentially of blocking diodes 3, photodiodes 4 and interconnecting beam leads 4', 5, and 6. Leads 4' provides electrical connections and leads 5 and 6 provide mechanical connections. A feature of periodicity results from this cell arrangement, enabling isolation of certain diodes in the array and at the same time providing for electrical continuity to the remaining diodes in the array. Drawing D shows a section of the array along D-D in drawing C.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 66% of the total text.

Page 1 of 2

Photodetector Arrays Using Beam Lead Interconnection Technology

This technique is for interconnecting photodetectors in an array by beam lead technology. Drawing A is a partial section of a substrate carrier with two levels of metallization. The square areas 1 serve as pads for bonding purposes. Drawing B is a cross-section taken along B-B in drawing A. Drawing C shows a cell arrangement for a detector array comprised essentially of blocking diodes 3, photodiodes 4 and interconnecting beam leads 4', 5, and 6. Leads 4' provides electrical connections and leads 5 and 6 provide mechanical connections. A feature of periodicity results from this cell arrangement, enabling isolation of certain diodes in the array and at the same time providing for electrical continuity to the remaining diodes in the array. Drawing D shows a section of the array along D-D in drawing C.

Diodes 4 are of the PIN- type, drawing E. Drawing G' shows a single cell arrangement consisting of blocking diode 3 and photodiode 4 interconnected by beam leads 8 and 9 which connect to the P region of diode 3 so that the crossunder connection is secured. By virtue of this and the prior arrangements, beam lead isolation completely eliminates the undesired transistor action present in PN junction isolated structures. These arrays do not have arbitrary sizes since edge connections are a factor which must be considered. This consideration is generally met by providing edge contact pads on the carrier substr...