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Nonsaturating Inverter

IP.com Disclosure Number: IPCOM000090657D
Original Publication Date: 1969-Jun-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 22K

Publishing Venue

IBM

Related People

Moore, RL: AUTHOR

Abstract

Double-emitter transistor T can be operated in a nonsaturating mode by leaving the base of the transistor floating and supplying the input to emitter e1 while emitter e2 remains at a fixed reference level. With Vin at ground potential, T is generally nonconducting providing an up input at output Vout. If the potential at Vin is raised it eventually reaches the breakdown voltage of emitter e1 with respect to the base of T. The backbiased emitter therefore provides the current into the base of T thus controlling the collector current and reducing the voltage Vout as T conducts. As T is driven harder by the voltage Vin, it eventually causes the transistor e, bc to breakdown in the inverse mode.

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Nonsaturating Inverter

Double-emitter transistor T can be operated in a nonsaturating mode by leaving the base of the transistor floating and supplying the input to emitter e1 while emitter e2 remains at a fixed reference level. With Vin at ground potential, T is generally nonconducting providing an up input at output Vout. If the potential at Vin is raised it eventually reaches the breakdown voltage of emitter e1 with respect to the base of T. The backbiased emitter therefore provides the current into the base of T thus controlling the collector current and reducing the voltage Vout as T conducts. As T is driven harder by the voltage Vin, it eventually causes the transistor e, bc to breakdown in the inverse mode. That is, the collector-to- emitter of the inverse transistor or, in other words, the emitter-to-collector junction of T breaks down and conducts. This breakdown occurs prior to the saturation of
T. Thus, very fast operating times are obtained with this circuit.

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