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Al(x)Ga(1-x)As PN Junctions on GaP Substrates

IP.com Disclosure Number: IPCOM000090721D
Original Publication Date: 1969-Jun-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Shih, KK: AUTHOR [+2]

Abstract

Efficient visible light-emitting diodes are prepared by growing a ternary III-V composition, having the general formula A(x)B(1-x)V where A is a first group 3 element, B is a second group 3 element, V is a group 5 element and x is from 0 to 1, on a chemically dissimilar GaP substrate. The ternary composition is grown on the GaP substrate by liquid phase epitaxy. External quantum efficiencies of up to 6 x 10/-4/ at 300 degrees K at about 6550 angstroms are measured on uncoated diodes made from AlxGa(1-x)As PN junctions grown on GaP substrates. The use of GaP substrates has the advantage of not requiring the removal of the substrate from the grown crystal since GaP is transparent to red and infrared light. If the diodes are mounted with GaP N-type substrate on top, most of the light is emitted from the top of the diode.

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Al(x)Ga(1-x)As PN Junctions on GaP Substrates

Efficient visible light-emitting diodes are prepared by growing a ternary III-V composition, having the general formula A(x)B(1-x)V where A is a first group 3 element, B is a second group 3 element, V is a group 5 element and x is from 0 to 1, on a chemically dissimilar GaP substrate. The ternary composition is grown on the GaP substrate by liquid phase epitaxy. External quantum efficiencies of up to 6 x 10/-4/ at 300 degrees K at about 6550 angstroms are measured on uncoated diodes made from AlxGa(1-x)As PN junctions grown on GaP substrates. The use of GaP substrates has the advantage of not requiring the removal of the substrate from the grown crystal since GaP is transparent to red and infrared light. If the diodes are mounted with GaP N-type substrate on top, most of the light is emitted from the top of the diode.

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