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Measuring Semiconductor Impurity Profiles by Magneto Resistance Effect

IP.com Disclosure Number: IPCOM000090747D
Original Publication Date: 1969-Jun-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 39K

Publishing Venue

IBM

Related People

Gardner, EE: AUTHOR [+2]

Abstract

In this method, a test pattern is formed on the device, a magnetic field is applied to cause current crowding in the pattern, and the resistivity is measured. The test pattern, shown in A, can be etched into an epitaxial layer as in B, or diffused into the substrate as in C. When magnetic field 12 is applied parallel to the surface of pattern 10 and a voltage Va is applied through terminals 14 and 16, the current in pattern 10 is forced toward the surface. This results in an increased voltage and apparent resistance in the body of pattern 10. Legs 18 and 20 can be utilized to obtain the voltage measurement Vm from contacts 22 and 24.

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Measuring Semiconductor Impurity Profiles by Magneto Resistance Effect

In this method, a test pattern is formed on the device, a magnetic field is applied to cause current crowding in the pattern, and the resistivity is measured. The test pattern, shown in A, can be etched into an epitaxial layer as in B, or diffused into the substrate as in C. When magnetic field 12 is applied parallel to the surface of pattern 10 and a voltage Va is applied through terminals 14 and 16, the current in pattern 10 is forced toward the surface. This results in an increased voltage and apparent resistance in the body of pattern 10. Legs 18 and 20 can be utilized to obtain the voltage measurement Vm from contacts 22 and 24. By varying the magnetic field 12 from zero to high values, variations in the measure of resistance are obtained which are directly related to the impurity distribution in the epitaxial layer or the diffusion.

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