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Polishing Method for GaAs or Ge

IP.com Disclosure Number: IPCOM000090750D
Original Publication Date: 1969-Jun-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Regh, J: AUTHOR [+2]

Abstract

This is a chemical-mechanical polishing technique to prepare Ge and GaAs substrates. The chemical removal is based on chemical displacement Plating reactions between Ge, GaAs and Cu/+2/ salt solutions. The polishing is done in a basic solution which typically consists of: Soluble copper salt 1% wt KOH 30% wt Water 69% wt.

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Polishing Method for GaAs or Ge

This is a chemical-mechanical polishing technique to prepare Ge and GaAs substrates. The chemical removal is based on chemical displacement Plating reactions between Ge, GaAs and Cu/+2/ salt solutions. The polishing is done in a basic solution which typically consists of: Soluble copper salt 1% wt

KOH 30% wt

Water 69% wt.

Wafers are mounted on a chemically inert plate and polished, face down, on a rotating turntable which is covered with a suitable polishing cloth. Raising the temperature of the solution and the table to 70-80 degrees C facilitates stock removal and improves the surface appearance.

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