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Capacitor Storage Cell

IP.com Disclosure Number: IPCOM000090752D
Original Publication Date: 1969-Jun-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Gregor, LV: AUTHOR

Abstract

This metal-silicon, nitride-silicon, dioxide-silicon capacitor MNOS is for use in a high-density storage array. MNOS capacitors have a well-defined threshold field at which hysteresis in a capacitance-voltage relationship. The application of a read voltage Vr to such a capacitor results in an output voltage Vout which is directly related to the capacitance of the MNOS capacitor. The capacitance, in turn, is directly related to the previously applied write voltage Vw. For a large negative value of Vw, the capacitance value is C2. At a high positive value of Vw, the capacitance value is C1. The MNOS capacitor maintains this value of capacitance C until it is disturbed by a relatively large negative voltage Vw. A relatively low voltage Vr does not change the capacitance but provides an output Vout.

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Capacitor Storage Cell

This metal-silicon, nitride-silicon, dioxide-silicon capacitor MNOS is for use in a high-density storage array. MNOS capacitors have a well-defined threshold field at which hysteresis in a capacitance-voltage relationship. The application of a read voltage Vr to such a capacitor results in an output voltage Vout which is directly related to the capacitance of the MNOS capacitor. The capacitance, in turn, is directly related to the previously applied write voltage Vw. For a large negative value of Vw, the capacitance value is C2. At a high positive value of Vw, the capacitance value is C1. The MNOS capacitor maintains this value of capacitance C until it is disturbed by a relatively large negative voltage Vw. A relatively low voltage Vr does not change the capacitance but provides an output Vout. A storage array constructed from these capacitors has nondestructive readout NDRO advantage. The structure of the MNOS capacitors consists of N diffused lines in P type Si, a layer of SIO(2), the composite oxide-nitride layer, and a metal, e.g., aluminum. High densities are achieved by planar processing.

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