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Formation of Very Thin Inorganic Insulating Films

IP.com Disclosure Number: IPCOM000090781D
Original Publication Date: 1969-Jul-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

DaSilva, EM: AUTHOR [+3]

Abstract

Insulating aluminum oxide films of 50 Angstroms or less are prepared by positioning an aluminum substrate in a conventional vacuum system containing an electron beam source. The substrate is positioned directly above the electron beam source. A pressure in the range of 10/-5/ torr is established within the vacuum chamber. The electron source is placed in operation, exposing the aluminum substrate to bombardment by charged species. The oxide films formed as a result of this process, when subjected to ambient conditions, do not evidence deterioration and have breakdown strengths in the range of 2x10/6/ volts/cm. The technique is compatible with various processes used in the fabrication of microcircuit devices.

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Formation of Very Thin Inorganic Insulating Films

Insulating aluminum oxide films of 50 Angstroms or less are prepared by positioning an aluminum substrate in a conventional vacuum system containing an electron beam source. The substrate is positioned directly above the electron beam source. A pressure in the range of 10/-5/ torr is established within the vacuum chamber. The electron source is placed in operation, exposing the aluminum substrate to bombardment by charged species. The oxide films formed as a result of this process, when subjected to ambient conditions, do not evidence deterioration and have breakdown strengths in the range of 2x10/6/ volts/cm. The technique is compatible with various processes used in the fabrication of microcircuit devices. Where superconducting metals are used as the substrate, the technique is especially applicable to the production of Josephson diodes.

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