Browse Prior Art Database

Magnetic Film Memory

IP.com Disclosure Number: IPCOM000090812D
Original Publication Date: 1969-Jul-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 54K

Publishing Venue

IBM

Related People

Daughton, JM: AUTHOR [+2]

Abstract

The memory, having nondestructive readout with a 2.5-D organization, utilizes limited interrogate pulses to improve the memory's yield, signal strength or operating margins or combination of these. Information storage medium 10, such as NiFe, which can include single or multiple magnetic layers in an open or closed magnetic flux path arrangement, has a plurality of sets 12A...12N of bit-sense lines 1...8 coupled to corresponding fan-in selection switches 14A...14N. These are connected to sense amplifier, bit driver and regeneration circuits 16A...16N. Switch address 18 is used to control the selection switches 14A...14N. Word lines 20A...20N, defining information storage positions in the storage medium 10 at their intersection with the bit-sense lines 1...8 of the sets 12A...12N, are connected to word driver 22.

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Magnetic Film Memory

The memory, having nondestructive readout with a 2.5-D organization, utilizes limited interrogate pulses to improve the memory's yield, signal strength or operating margins or combination of these. Information storage medium 10, such as NiFe, which can include single or multiple magnetic layers in an open or closed magnetic flux path arrangement, has a plurality of sets 12A...12N of bit- sense lines 1...8 coupled to corresponding fan-in selection switches 14A...14N. These are connected to sense amplifier, bit driver and regeneration circuits 16A...16N. Switch address 18 is used to control the selection switches 14A...14N. Word lines 20A...20N, defining information storage positions in the storage medium 10 at their intersection with the bit-sense lines 1...8 of the sets 12A...12N, are connected to word driver 22. Logic and control circuits 24 are used to select the desired word line 20A, 20B or 20N and the required bit-sense line of each of the sets 12A...12N.

In operation, when a word is to be read out, for example, the word on line 20A which includes bits located at the intersection of word line 20A with bit-sense line 6 of each of the sets 12A...12N, selection switches 14A and 14B connect bit- sense line 6 of each set 12A...12N, to the corresponding sense amplifier, bit driver and regeneration circuits 16A...16N. A read pulse from word driver 22 is passed through word line 20A to produce sense signals in lines 6 of each of the sets 12A......