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Low Temperature Deposition of Amorphous Films

IP.com Disclosure Number: IPCOM000090849D
Original Publication Date: 1969-Jul-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 21K

Publishing Venue

IBM

Related People

Thompson, WA: AUTHOR

Abstract

Amorphous films are produced by a low-voltage electrical arc discharge occurring in the apparatus shown. Two electrodes are immersed in liquid helium at 4.2 degrees K or lower. A discharge between the electrodes causes erosion of the electrode material, with the negative electrode being most heavily eroded. The presence of cryogenic fluid causes vaporized electrode atoms to quickly recondense into extremely small grains. This method is useful either for producing a high critical temperature surface layer on a dielectric substance or for embedding small superconductors in a thick dielectric matrix. The electrodes have a concentration of atoms which are superconducting in some physical form, e.g., pure, crystalline, etc.

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Low Temperature Deposition of Amorphous Films

Amorphous films are produced by a low-voltage electrical arc discharge occurring in the apparatus shown. Two electrodes are immersed in liquid helium at 4.2 degrees K or lower. A discharge between the electrodes causes erosion of the electrode material, with the negative electrode being most heavily eroded. The presence of cryogenic fluid causes vaporized electrode atoms to quickly recondense into extremely small grains. This method is useful either for producing a high critical temperature surface layer on a dielectric substance or for embedding small superconductors in a thick dielectric matrix. The electrodes have a concentration of atoms which are superconducting in some physical form, e.g., pure, crystalline, etc.

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