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Preparing High Purity Crystalline Semiconductor Materials

IP.com Disclosure Number: IPCOM000090865D
Original Publication Date: 1969-Jul-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 55K

Publishing Venue

IBM

Related People

Plaskett, TS: AUTHOR

Abstract

A method of preparing ingots of semiconductor materials, e.g., III-V and II-VI compounds and alloys of them, consists of flowing a gaseous compound into a bath of a molten metal element of that compound. The bath has a temperature profile so that the reaction product crystallizes out. Container 1 has molten metal 2. e.g., gallium or a mixture of metals, is placed in furnace 3 which has a steep temperature gradient established along its length. A gaseous compound, e.g., phosphine PH(3), and an inert gas, argon, flows into metal 2 through inlet 4. The temperature gradient is produced by cool air blast 5 directed at the lower surface of container 1 and baffles 6. The gaseous compound reacts with metal 2 and the reaction product GaP dissolves in the metal.

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Preparing High Purity Crystalline Semiconductor Materials

A method of preparing ingots of semiconductor materials, e.g., III-V and II-VI compounds and alloys of them, consists of flowing a gaseous compound into a bath of a molten metal element of that compound. The bath has a temperature profile so that the reaction product crystallizes out. Container 1 has molten metal
2. e.g., gallium or a mixture of metals, is placed in furnace 3 which has a steep temperature gradient established along its length. A gaseous compound, e.g., phosphine PH(3), and an inert gas, argon, flows into metal 2 through inlet 4. The temperature gradient is produced by cool air blast 5 directed at the lower surface of container 1 and baffles 6. The gaseous compound reacts with metal 2 and the reaction product GaP dissolves in the metal. The convection currents in container 1 move the reaction product to the bottom where it crystallizes out of metal 2 to form highly pure crystalline ingot 7. The position of interface 8 between ingot 7 and metal 2 is controlled by the position of RF coil 9 positioned in the wall of furnace 3. The latter can be moved relative to container 1 to change the position of coil 9.

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