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Isothermal Continuous Changing of Ternary Melt Compositions at Solid Liquid Equilibrium

IP.com Disclosure Number: IPCOM000091162D
Original Publication Date: 1969-Nov-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Grandia, J: AUTHOR [+2]

Abstract

This method allows uniform changes in a melt composition. The method provides an alloy or element which does not melt at the temperature used for epitaxy but which dissolves and alters the melt composition in the allowable manner, i.e., along the liquidus line at constant temperature. A melt of Ga-Al is maintained at about 950 degrees C while a thin rod of AlSb is slowly lowered into the melt. Because Sb segregates heavily towards the liquid phase, the epitaxial layer contains only minute traces of Sb, an isoelectronic impurity, while the Al concentration in the layer is markedly increased. AlSb can be replaced by AlNi. Similar methods can be used for systems such as GaInP and GaInSb.

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Isothermal Continuous Changing of Ternary Melt Compositions at Solid Liquid Equilibrium

This method allows uniform changes in a melt composition. The method provides an alloy or element which does not melt at the temperature used for epitaxy but which dissolves and alters the melt composition in the allowable manner, i.e., along the liquidus line at constant temperature. A melt of Ga-Al is maintained at about 950 degrees C while a thin rod of AlSb is slowly lowered into the melt. Because Sb segregates heavily towards the liquid phase, the epitaxial layer contains only minute traces of Sb, an isoelectronic impurity, while the Al concentration in the layer is markedly increased. AlSb can be replaced by AlNi. Similar methods can be used for systems such as GaInP and GaInSb.

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