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Browse Prior Art Database

Creep Control in Magnetic Film Memories

IP.com Disclosure Number: IPCOM000091166D
Original Publication Date: 1969-Nov-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 21K

Publishing Venue

IBM

Related People

Berkowitz, AE: AUTHOR

Abstract

In memories employing a continuous magnetic film 10, a substantial reduction in creep is achieved by providing grooves 12 along the hard axis of the film 10, i.e., in the direction perpendicular to the easy axis induced by a magnetic field during deposition of the film. The grooving is produced by coating the film with photoresist, exposing a line pattern consisting of 0.0002 inch lines on 0.001 inch centers, developing away the resist above the lines, and etching the grooves 12 to the required depth either chemically, electrolytically, or with ion bombardment. A film 900 Angstroms thick, containing NiFe and 8% Co, is etched in the hard direction groove pattern in depths of about 150 Angstroms to 300 Angstroms, with a depth of approximately 200 200 Angstroms preferred.

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Creep Control in Magnetic Film Memories

In memories employing a continuous magnetic film 10, a substantial reduction in creep is achieved by providing grooves 12 along the hard axis of the film 10, i.e., in the direction perpendicular to the easy axis induced by a magnetic field during deposition of the film. The grooving is produced by coating the film with photoresist, exposing a line pattern consisting of 0.0002 inch lines on 0.001 inch centers, developing away the resist above the lines, and etching the grooves 12 to the required depth either chemically, electrolytically, or with ion bombardment. A film 900 Angstroms thick, containing NiFe and 8% Co, is etched in the hard direction groove pattern in depths of about 150 Angstroms to 300 Angstroms, with a depth of approximately 200 200 Angstroms preferred.

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