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Photoconductivity in Sputtered Zinc Oxide Films

IP.com Disclosure Number: IPCOM000091196D
Original Publication Date: 1969-Nov-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Kay, E: AUTHOR [+3]

Abstract

The technique is for the preparation of high resistivity photoconducting lithium-doped ZnO films by glow discharge sputtering. Zinc oxide is doped with lithium by the following procedure. One gram of LiNO(3) is dissolved in 600 cc of distilled water and 120.0 grams of 99.999% ZnO powder is then dispersed in this solution. The mixture is dried and subsequently fired in air at 500 degrees C for 2 hours. The powder is then ground through a silk mesh and evenly dispersed in a 3 inch diameter die and subjected to a 75 ton load. The 3 inch by 1/8-inch disk is then fired at 900 degrees C for 2 hours and cooled slowly. The resulting disk contains 0.030% Li by weight as determined by flame photometry. This lithium doped ZnO disk is used as the sputtering target.

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Photoconductivity in Sputtered Zinc Oxide Films

The technique is for the preparation of high resistivity photoconducting lithium-doped ZnO films by glow discharge sputtering. Zinc oxide is doped with lithium by the following procedure. One gram of LiNO(3) is dissolved in 600 cc of distilled water and 120.0 grams of 99.999% ZnO powder is then dispersed in this solution. The mixture is dried and subsequently fired in air at 500 degrees C for 2 hours. The powder is then ground through a silk mesh and evenly dispersed in a 3 inch diameter die and subjected to a 75 ton load.

The 3 inch by 1/8-inch disk is then fired at 900 degrees C for 2 hours and cooled slowly. The resulting disk contains 0.030% Li by weight as determined by flame photometry. This lithium doped ZnO disk is used as the sputtering target.

Films are grown at an RF input power of 300 watts in pure oxygen at pressures from 7 to 40 x 10/-3/ torr. The substrates are generally, 0.5 inch x
0.020 inch disks located 3.1 cm from the target. Substrates are sapphire or quartz which are gallium-soldered to the temperature controlled anode and maintained at temperatures from 0 degree C to 100 C. X-ray diffraction is used to characterize the structural nature of the films. Atomic absorption spectrophotometry is used to determine the lithium concentration of the films. ZnO films are deposited at approximately 1 angstroms sec at 0 degrees C in oxygen at 40 x 10/-3/ torr. The spectral response is from the blue to highe...