Browse Prior Art Database

Light Emitting Diode

IP.com Disclosure Number: IPCOM000091211D
Original Publication Date: 1969-Nov-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 21K

Publishing Venue

IBM

Related People

McDermott, PS: AUTHOR [+3]

Abstract

Light emitting diode LED 10 has formed on its P substrate 11 of GaAs inner P region 12a of GaAlAs. Outer N region 12b is formed in the GaAlAs to provide PN junction 12c. Electrodes, not shown, are fixed to substrate 11 and N region 12b.

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Light Emitting Diode

Light emitting diode LED 10 has formed on its P substrate 11 of GaAs inner P region 12a of GaAlAs. Outer N region 12b is formed in the GaAlAs to provide PN junction 12c. Electrodes, not shown, are fixed to substrate 11 and N region 12b.

In operation, the PN junction 12c is biased in the forward direction by a bias supply, not shown, which is connected to the electrodes. As a result, light emits from the junction 12c causing the diode 10 to act as an edge emitter type. An opaque coating, not shown, can be provided for selectively masking certain edges or portions.

Substrate 11 provides a rugged LED structure. By masking and etching processes, a monolithic array of discrete PN junction diodes can be formed on a common substrate 11, in which case individual electrodes are provided in each region 12c of the plural diodes.

A diode PPN structure 10 is made by a method comprising various steps. For step a, there is provided a P doped substrate 11 of GaAs, using Zn as the dopant. In step b, a melt comprised of 4.5 gms of GaAs polycrystal, 0.075 gms of Al, and 20.0 gms of GA is heated to a temperature of 970 degrees C for approximately 20 minutes and then cooled to a temperature of 950 degrees C. In step c, the P doped substrate 11 is immersed into the melt at the temperature of 950 degrees C and then heated to a temperature of 958 degrees C. There is next epitaxial solution growing of the P region 12a on the immersed substrate 11 by cooling the melt...