Browse Prior Art Database

Use of the MOS Substrate as a Control Element

IP.com Disclosure Number: IPCOM000091261D
Original Publication Date: 1967-Dec-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 25K

Publishing Venue

IBM

Related People

McDowell, JJ: AUTHOR

Abstract

The potential on substrate terminal 10 of metal oxide semiconductor device MOS 12 can be varied to perform logic, control, and level-setting functions. Monolithic MOS substrate 14 can contain many MOS devices such as 16 and 18. These devices can all be turned on or off by varying the potential at terminal 10. This is because, in normal operation, the current flow from source to drain, or vice versa, depends on the reverse biasing of the source-substrate and drain substrate junctions. Therefore by forward biasing or by lessening the degree of reverse bias of these junctions with potentials applied to substrate terminal 10, the conduction through the devices can be stopped or altered to perform desired functions.

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Use of the MOS Substrate as a Control Element

The potential on substrate terminal 10 of metal oxide semiconductor device MOS 12 can be varied to perform logic, control, and level-setting functions. Monolithic MOS substrate 14 can contain many MOS devices such as 16 and 18. These devices can all be turned on or off by varying the potential at terminal 10. This is because, in normal operation, the current flow from source to drain, or vice versa, depends on the reverse biasing of the source-substrate and drain substrate junctions. Therefore by forward biasing or by lessening the degree of reverse bias of these junctions with potentials applied to substrate terminal 10, the conduction through the devices can be stopped or altered to perform desired functions. Examples of some of the functions which can be so performed are the block resetting of storage devices to the 0 state and applying or removing the electrical power supplied to the devices.

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