Browse Prior Art Database

Transistor Read Only Storage Cell

IP.com Disclosure Number: IPCOM000091263D
Original Publication Date: 1967-Dec-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Gersbach, JE: AUTHOR

Abstract

Signals on drive lines 10 are coupled to sense lines 12 through directly-coupled emitter-followers 14 and 16 in this memory matrix. Information is stored by breaking the connection between the drive and the sense lines, such as at A, in the base circuits of transistors 14. Thus, at a location where the connection is broken, a 0 is stored. Where the connection is not broken, a 1 is stored. Sense line 12 is common to emitter-followers 16, the number depending on the arrangement of the organization matrices on monolithic chips. The advantages of this matrix are high-array line impedances, high gain, and low-power consumption in the array element.

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Transistor Read Only Storage Cell

Signals on drive lines 10 are coupled to sense lines 12 through directly- coupled emitter-followers 14 and 16 in this memory matrix. Information is stored by breaking the connection between the drive and the sense lines, such as at A, in the base circuits of transistors 14. Thus, at a location where the connection is broken, a 0 is stored. Where the connection is not broken, a 1 is stored. Sense line 12 is common to emitter-followers 16, the number depending on the arrangement of the organization matrices on monolithic chips. The advantages of this matrix are high-array line impedances, high gain, and low-power consumption in the array element.

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