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Obtaining Pinhole Free Films

IP.com Disclosure Number: IPCOM000091270D
Original Publication Date: 1967-Dec-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 57K

Publishing Venue

IBM

Related People

Logan, J: AUTHOR [+2]

Abstract

An insulating spacer is used between the anode and the substrate being coated in a sputtering system. Such spacer provides a more stable plasma during sputtering and lowers the density of defects in the sputtered films. Vacuum chamber 1 has within it target 2 and anode 3. The latter supports insulating spacer 4 upon which is positioned substrate holder plate 5 and gallium-backed substrates 6.

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Obtaining Pinhole Free Films

An insulating spacer is used between the anode and the substrate being coated in a sputtering system. Such spacer provides a more stable plasma during sputtering and lowers the density of defects in the sputtered films. Vacuum chamber 1 has within it target 2 and anode 3. The latter supports insulating spacer 4 upon which is positioned substrate holder plate 5 and gallium- backed substrates 6.

The gallium backing is used as a path for heat to conduct from substrates 6 to anode 3. Spacer 4 can be a glass plate or a thin-film insulator deposited upon anode 3, itself composed of, for example, silicon dioxide. RF sputtering is accomplished by application of an RF voltage across target 2 and anode 3.

Reactive sputtering of silicon in a nitrogen atmosphere onto silicon substrates which are gallium backed is accomplished with and without insulating spacer 4. The silicon nitride film using insulating spacer 4 has a much lower density of defects than the silicon nitride film where such spacer is not used.

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