Browse Prior Art Database

Silicon Surface Preparation

IP.com Disclosure Number: IPCOM000091300D
Original Publication Date: 1968-Jan-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 21K

Publishing Venue

IBM

Related People

Lever, RF: AUTHOR [+2]

Abstract

The surface of silicon wafer 1 is exposed in an open tube system 3 and maintained at constant temperature T by heater 5. A low oxygen pressure is introduced into the inert carrier gas, e.g., argon or helium, flowing along system 3. Such oxygen pressure is sufficient at temperature T to support the surface etch reaction 2Si + O(2) approaches 2siO(vapor) so as to provide a smooth and chemically clean surface. The oxygen pressure is then increased sufficiently to support the reaction 2Si+O(2) approaches 2SiO(2)(solid) at temperature T and form glassy SiO(2) layer 7. Alternatively, the oxygen pressure introduced into the inert carrier gas can be maintained constant and temperature T varied to support the etch reaction and then reduced sufficiently to support the deposition of layer 7.

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Silicon Surface Preparation

The surface of silicon wafer 1 is exposed in an open tube system 3 and maintained at constant temperature T by heater 5. A low oxygen pressure is introduced into the inert carrier gas, e.g., argon or helium, flowing along system
3. Such oxygen pressure is sufficient at temperature T to support the surface etch reaction 2Si + O(2) approaches 2siO(vapor) so as to provide a smooth and chemically clean surface. The oxygen pressure is then increased sufficiently to support the reaction 2Si+O(2) approaches 2SiO(2)(solid) at temperature T and form glassy SiO(2) layer 7. Alternatively, the oxygen pressure introduced into the inert carrier gas can be maintained constant and temperature T varied to support the etch reaction and then reduced sufficiently to support the deposition of layer
7.

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