Browse Prior Art Database

LSA Mode Devices

IP.com Disclosure Number: IPCOM000091301D
Original Publication Date: 1968-Jan-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Lanza, C: AUTHOR [+2]

Abstract

A Gunn-effect oscillator, operative in the LSA-mode, is shown in A comprises a grounded base NPN GaAs transistor-like body 1, the collector region 3 being connected to output cavity 5, shown schematically, tuned to a proper frequency and which incorporates junction capacitance C(j). Emitter region 7 and collector region 3 of body 1 have carrier concentrations of 10/17//cm/3/ and 10/15//cm/3/, respectively.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

LSA Mode Devices

A Gunn-effect oscillator, operative in the LSA-mode, is shown in A comprises a grounded base NPN GaAs transistor-like body 1, the collector region 3 being connected to output cavity 5, shown schematically, tuned to a proper frequency and which incorporates junction capacitance C(j). Emitter region 7 and collector region 3 of body 1 have carrier concentrations of 10/17//cm/3/ and 10/15//cm/3/, respectively.

The active region of the oscillator is the depletion region 9 associated with the reverse-biased collector junction 11 in which carriers injected from emitter region are transferred to the low-conduction band. The electric field distribution in depletion region 9 is shown in B. The electric field intensity along the major portion of region 9 is in excess of the threshold value E necessary to transfer carriers between the high mobility and low mobility conduction bands.

When subjected to electric field intensities in excess of the threshold value E(T) in depletion region 9, carriers are transferred to the low mobility band and body 1 exhibits a negative resistance. A high-field domain is not nucleated and propagated in depletion region 9 due to the low nl product, i.e., <<10/12/cm/-2/, where n is the electron density and l is the length of depletion region 9. Thus the frequency of current oscillations is determined only by tuned circuit 5 over a wide range.

1

Page 2 of 2

2

[This page contains 2 pictures or other non-text objects]