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Photoresist Stripping

IP.com Disclosure Number: IPCOM000091307D
Original Publication Date: 1968-Jan-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Burrage, PM: AUTHOR [+2]

Abstract

The method is for stripping photoresist from semiconductor wafers. The resist coating is first swollen in a suitable solvent. This is followed by immersion of the treated device in an organic solvent for and containing ozone. The processed resist is removed from the substrate by mechanical action, e,g., agitation of the ozone containing solvent or fresh solvent or by a solvent spray.

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Photoresist Stripping

The method is for stripping photoresist from semiconductor wafers. The resist coating is first swollen in a suitable solvent. This is followed by immersion of the treated device in an organic solvent for and containing ozone. The processed resist is removed from the substrate by mechanical action, e,g., agitation of the ozone containing solvent or fresh solvent or by a solvent spray.

In a first step, silicon wafers, coated with KTFR, a product of Eastman Kodak Co., are given an initial treatment by immersion in methyl-ethyl ketone in which the resist matrix is swollen by the solvent. In a second step, the initially treated device is then immersed in a carbon tetrachloride solution of ozone in which the dissolved ozone enters the swollen resist matrix and attacks the double bonds of the resist.

The resultant resist is characterized by a jelly-like consistency which is easily removed by the gentle mechanical action of a solvent spray.

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