Browse Prior Art Database

Modified Memory Organization for Large Capacity Systems

IP.com Disclosure Number: IPCOM000091373D
Original Publication Date: 1968-Jan-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 24K

Publishing Venue

IBM

Related People

Elfant, RF: AUTHOR

Abstract

This procedure is for reading out of and writing into a large capacity memory organization, particularly where the memory is a thin-film memory.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Modified Memory Organization for Large Capacity Systems

This procedure is for reading out of and writing into a large capacity memory organization, particularly where the memory is a thin-film memory.

Apparatus 1 represents a memory that includes bit lines that are grouped in n(2) groups or words, each word containing n(1) bits. The total number n of bit lines is n(1) x n(2). However, only n(1) sense amplifiers and n(1) detectors are used in the memory method, in that it is not economical to have n(1) x n(2) amplifiers and detectors. For reading, the n(1) sense amplifiers and detectors are connected through a switch matrix to a desired word in memory and the latter is nondestructively read out. Thus, during reading, only a single group of sense amplifiers and detectors, one word wide, reads out serially all desired groups of words from memory.

During writing, where one word out of the n(2) words is to be written into memory, n(2)-1 words are serially read out nondestructively into n registers. The desired word to be written is also entered into the available one of the n registers. Then all words in the register are written in parallel back into memory.

This read-write method is suitable for use with a large capacity memory, such as is manufactured by batch fabricated techniques where it is desired to maximize the number of storage bits serviced per amplifier and per drive line.

1

Page 2 of 2

2

[This page contains 1 picture or other non-text object]