Dismiss
InnovationQ will be updated on Sunday, Oct. 22, from 10am ET - noon. You may experience brief service interruptions during that time.
Browse Prior Art Database

Photoresist Removal in Ozone Containing Atmospheres

IP.com Disclosure Number: IPCOM000091399D
Original Publication Date: 1968-Jan-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Burrage, PM: AUTHOR [+3]

Abstract

This method adapts the process of U.S. Patent 2,443,373 to the removal of photoresist from the surfaces of a semiconductor, as well as to the general application of stripping of resist from silicon dioxide, aluminum and glass surfaces.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Photoresist Removal in Ozone Containing Atmospheres

This method adapts the process of U.S. Patent 2,443,373 to the removal of photoresist from the surfaces of a semiconductor, as well as to the general application of stripping of resist from silicon dioxide, aluminum and glass surfaces.

Subjecting heated, resist-coated semiconductor wafers to an atmosphere of oxygen containing a small percentage of ozone effectively removed the organic resist layer from the wafer in a relatively short time. At wafer temperatures in the region of 250 degrees C, dry layers of KPR*-2 and KTFR, a product of Eastman Kodak Co., are removed in less than 5 minutes, the time needed being approximately proportional to the resist thickness. The ozone-O(2) mixture is generated by passing oxygen through a commercial ozonator such as one sold by the Welsbach Corporation, Ozone Processes Division, Philadelphia, Pennsylvania.

Ozonized compressed air is also effective in removing photoresist at a somewhat slower rate than ozonized oxygen. Comparably processed postbaked KTFR coated wafers, treated at 250 degrees C wafer temperature, show burnoff times of 75 seconds for ozonized oxygen and 150 seconds for ozonized air.

Resist stripping by the above process leaves no detectable residue on the wafer surfaces as determined by various microscopic examinations. *Trademark of Eastman Kodak Co.

1