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Fabrication of Silicon IGFET's Utilizing Annealing in Sparked Hydrogen

IP.com Disclosure Number: IPCOM000091408D
Original Publication Date: 1968-Jan-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Balk, P: AUTHOR [+2]

Abstract

IGFET's are annealed in an atmosphere of atomic hydrogen. Subsequent to effecting the appropriate source and drain diffusions, the devices are heated to a temperature between 200 and 350 degrees C for a duration of 5 to 45 minutes in a hydrogen atmosphere. The hydrogen is passed through an electrical discharge chamber to provide nascent hydrogen. After cooling, gate electrode evaporation is performed. This technique improves the transconductance of IGFET's of either the NPN or PNP type. It also reduces the amount of oxide charge to less than 1 x 10'' electron charges/cm/2/. Additionally, the technique yields normally-off NPN devices and PNP devices which require only very small voltages to be switched on.

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Fabrication of Silicon IGFET's Utilizing Annealing in Sparked Hydrogen

IGFET's are annealed in an atmosphere of atomic hydrogen. Subsequent to effecting the appropriate source and drain diffusions, the devices are heated to a temperature between 200 and 350 degrees C for a duration of 5 to 45 minutes in a hydrogen atmosphere. The hydrogen is passed through an electrical discharge chamber to provide nascent hydrogen. After cooling, gate electrode evaporation is performed. This technique improves the transconductance of IGFET's of either the NPN or PNP type. It also reduces the amount of oxide charge to less than 1 x 10'' electron charges/cm/2/. Additionally, the technique yields normally-off NPN devices and PNP devices which require only very small voltages to be switched on.

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