Browse Prior Art Database

Catalytic Burnoff of Photoresist

IP.com Disclosure Number: IPCOM000091433D
Original Publication Date: 1968-Jan-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 21K

Publishing Venue

IBM

Related People

Klem, CG: AUTHOR

Abstract

In this process, nickel dimethylgloxime is used as a catalytic agent to improve photoresist burnoff rate.

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Catalytic Burnoff of Photoresist

In this process, nickel dimethylgloxime is used as a catalytic agent to improve photoresist burnoff rate.

Nickel dimethylgloxime is sprinkled on the photoresist covered SiO(2) wafer and is subjected to various temperatures in an O(2) ambient. At 250 Degrees C the compound sublimes on the optical window of the hot stage. At 300 Degrees- 320 Degrees C the resist surface shows signs of burning. At 380 Degrees-400 Degrees C, flashoff of layer after layer of resist in a rapid and uniform manner is obtained. After two minutes at this temperature, the resist is completely removed.

The overall result of using this compound is to decrease the temperature, necessary for total removal of the photoresist, from 500 Degrees C to 380 Degrees-400 Degrees C and to decrease the time involved to two minutes. Thus complete resist burnoff at a lower temperature and in less time is permitted.

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