Browse Prior Art Database

Selected Area Ion Etching

IP.com Disclosure Number: IPCOM000091437D
Original Publication Date: 1968-Feb-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 51K

Publishing Venue

IBM

Related People

Dreikorn, RE: AUTHOR [+2]

Abstract

Circuit interconnections are produced on dielectric material in an ion or reverse sputtering process without using photomask technology. The photomask is replaced by masking tape containing the circuit pattern in the form of openings in the tape or by a shaped RF electrode.

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Selected Area Ion Etching

Circuit interconnections are produced on dielectric material in an ion or reverse sputtering process without using photomask technology. The photomask is replaced by masking tape containing the circuit pattern in the form of openings in the tape or by a shaped RF electrode.

Double-backed masking tape 1, containing the circuit pattern as at 2, is attached to the underside of dielectric material 3 to which metal 4, such as copper, is laminated. RF electrode 5 is firmly attached to the other side of tape 1 to provide good electrical contact between the electrode and the dielectric at all areas where tape 1 is not removed to form the circuit pattern. Another method of obtaining the same effect is that of attaching the shaped RF electrode directly to the dielectric with the circuit pattern engraved on the electrode face.

In ion etching or reverse sputtering, circuit 6 is produced in the metal on the upper or exposed side. Where the RF electrode is maintained in contact with the tape or directly with the dielectric, the etch rate is accelerated in that area. In areas where there are gaps in the tape or recesses in the engraved electrode, indicative of the circuit configuration, etching occurs at about half rate. The metal that remains defines the desired circuits and can be plated to produce suitable interconnections.

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