Browse Prior Art Database

Memory Cell With FET's

IP.com Disclosure Number: IPCOM000091489D
Original Publication Date: 1968-Feb-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 21K

Publishing Venue

IBM

Related People

Frantz, H: AUTHOR [+3]

Abstract

Two FET's are cross-coupled to form a multivibrator. These FET's show two sources similar to a multiemitter transistor. A multisource FET can also be used to form the two load resistors connected with the drains of the cross-coupled FET's. Read and write operations are the same as in the multiemitter memory cell. The addressing pulse is applied at terminal VC. Read or write current is applied via A or B. The above-mentioned FET comprises two electrically repeated independent source diffusions controlled by a common gate.

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Memory Cell With FET's

Two FET's are cross-coupled to form a multivibrator. These FET's show two sources similar to a multiemitter transistor. A multisource FET can also be used to form the two load resistors connected with the drains of the cross-coupled FET's. Read and write operations are the same as in the multiemitter memory cell. The addressing pulse is applied at terminal VC. Read or write current is applied via A or B. The above-mentioned FET comprises two electrically repeated independent source diffusions controlled by a common gate.

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