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Connecting Conductive Pattern to Substrate

IP.com Disclosure Number: IPCOM000091492D
Original Publication Date: 1968-Feb-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 30K

Publishing Venue

IBM

Related People

Addy, J: AUTHOR [+3]

Abstract

It is sometimes necessary to electrically connect a conductor carried on a layer of insulating material to an underlying substrate by via holes through the insulating layer. This can be difficult when the insulating material is a material where the etchant for the insulator also tends to remove conventional photoresist masking layers.

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Connecting Conductive Pattern to Substrate

It is sometimes necessary to electrically connect a conductor carried on a layer of insulating material to an underlying substrate by via holes through the insulating layer. This can be difficult when the insulating material is a material where the etchant for the insulator also tends to remove conventional photoresist masking layers.

The drawing shows a method for overcoming this problem. Substrate 1, of semiconductive or conductive material, has insulating layer 2, for example, SiO, provided on it by conventional techniques.

Metal film 3 is provided on layer 2 by convenient technique. Using layer 4 of photoresist material and suitable photolithographic techniques, hole 5 is formed to expose film 3. Hole 6 is formed in film 3 by using convenient etchant to expose surface of layer 2. Via hole 7 can be etched by using suitable etchant with layer 3 serving as a masking layer.

After removing layer 4, a desired conductor configuration can be etched in film 3. Before or after providing the conductor configuration in film 3, via hole 7 is filled with conductive material, for example, by plating or evaporation, to electrically connect substrate 1 with film 3. To test the electrical continuity of the conductor configuration, then via hole 7 is not filled with conductive material until after film 3 is etched to form the conductor configuration. It may be necessary to further increase the thickness of film 3 by plating after etchi...