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Improving Contact Resistance and Adhesion of Sputtered Films

IP.com Disclosure Number: IPCOM000091509D
Original Publication Date: 1968-Mar-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Stern, E: AUTHOR

Abstract

This method is for improving contact resistance and adhesion of sputtered films. Such are realized by applying a negative potential in excess of 75 or 100 volts to a substrate during the deposition of thin films on it in conventional DC or RF sputtering apparatus to prevent the formation of an organic film layer on the deposition surface. The organic film is considered to result from oil contamination of the vacuum system. The bias applied can be either RF or DC. The application of negative substrate bias during deposition, in addition, results in an improvement in etchability of the film.

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Improving Contact Resistance and Adhesion of Sputtered Films

This method is for improving contact resistance and adhesion of sputtered films. Such are realized by applying a negative potential in excess of 75 or 100 volts to a substrate during the deposition of thin films on it in conventional DC or RF sputtering apparatus to prevent the formation of an organic film layer on the deposition surface. The organic film is considered to result from oil contamination of the vacuum system. The bias applied can be either RF or DC. The application of negative substrate bias during deposition, in addition, results in an improvement in etchability of the film.

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