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Producing Large Area Isothermal Strip Heaters

IP.com Disclosure Number: IPCOM000091520D
Original Publication Date: 1968-Mar-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 39K

Publishing Venue

IBM

Related People

Wuestenhoefer, WC: AUTHOR

Abstract

This technique achieves large area isothermal heating using a pyrolytic graphite strip by tapering the ends of the strip and making pressure contacts to it via larger high-density graphite blocks. Both isothermal heating on the strip surface and limited heating of the electrodes are obtained. Strip 10 of the apparatus is formed from pyrolytic graphite so that the planes of high thermal conductivity are parallel to the large area faces of such strip. Good electrical contact and poor thermal contact to carbon electrodes 12 and 14 are accomplished by so that the planes of high thermal conductivity are parallel to the large area faces of such strip.

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Producing Large Area Isothermal Strip Heaters

This technique achieves large area isothermal heating using a pyrolytic graphite strip by tapering the ends of the strip and making pressure contacts to it via larger high-density graphite blocks. Both isothermal heating on the strip surface and limited heating of the electrodes are obtained. Strip 10 of the apparatus is formed from pyrolytic graphite so that the planes of high thermal conductivity are parallel to the large area faces of such strip. Good electrical contact and poor thermal contact to carbon electrodes 12 and 14 are accomplished by so that the planes of high thermal conductivity are parallel to the large area faces of such strip. Good electrical contact and poor thermal contact to carbon electrodes 12 and 14 are accomplished by tapering strip 10 at each end so that it wedges into the slitted electrodes 12 and 14. A strip 10 which is 1.25'' x 0.50''x .015'', operated at 100 amps, 6 volts, 60 cycles AC attains a temperature of 1300 degrees C. This system operates in both vacuum and inert gas ambients. This system is useful for heating semiconductor wafers which require high-temperature, large area isothermal heating during their fabrication steps. Electrodes 12 and 14 are supported by water-cooled electrode supports 16 and 18 respectively. Bell jar 19 covers strip 10. Gas inlet and outlet pipes 20 and 22 are used for inert gas ambient and a vacuum is established via pipe 24.

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