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Forming Metal Layers on III-V Semiconductor Wafers

IP.com Disclosure Number: IPCOM000091521D
Original Publication Date: 1968-Mar-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Woodall, JM: AUTHOR [+2]

Abstract

This procedure forms a group III metal surface on a III-V semiconductor wafer whose group V component is a volatile species. The group V component is evaporated from the surface of the III-V compound leaving behind the group III metal layer. A wafer of either GaAs or GaP is placed on the graphite isothermal strip heater, contained in a vacuum system as described on Pg. 1475. After a vacuum of < 10/-3/ Torr. is obtained, the wafer is gradually heated until its surface appears metallic at approximately 900 degrees C to 1000 degrees C for GaAs and approximately 1100 degrees C to 1200 degrees C for GaP. The temperature at which the metallic layer forms depends on the thickness of the wafer.

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Forming Metal Layers on III-V Semiconductor Wafers

This procedure forms a group III metal surface on a III-V semiconductor wafer whose group V component is a volatile species. The group V component is evaporated from the surface of the III-V compound leaving behind the group III metal layer. A wafer of either GaAs or GaP is placed on the graphite isothermal strip heater, contained in a vacuum system as described on Pg. 1475. After a vacuum of < 10/-3/ Torr. is obtained, the wafer is gradually heated until its surface appears metallic at approximately 900 degrees C to 1000 degrees C for GaAs and approximately 1100 degrees C to 1200 degrees C for GaP. The temperature at which the metallic layer forms depends on the thickness of the wafer. Although the face of the wafer next to the carbon heater strip is hotter than the surface upon which the metallic wafer forms, it does not decompose. This procedure is useful for either forming ohmic contacts to GaAs or GaP devices or forming metal layers to obtain good wetting of a substrate for crystal growth by a solution regrowth technique.

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