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IGFET Regenerative Source Follower

IP.com Disclosure Number: IPCOM000091621D
Original Publication Date: 1968-Apr-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 22K

Publishing Venue

IBM

Related People

Sonoda, GY: AUTHOR

Abstract

The addition of capacitor 10 allows large load voltages V3 to be controlled with an initially low gate voltage V2. Initially, V1 is close to zero volts while V2 is applied to the gate of FET 12 by closing switch 14. When the voltage across capacitor 10 reaches V2 in magnitude, switch 14 is opened. Then if the voltage V1 is increased, FET 12 starts conducting causing potential V3 to increase. The voltage at the gate of FET 12 increases with V3 as a result of capacitor 10 coupling the source of the FET to its gate. Thus, the potential difference is maintained between the gate and the source by capacitor 10 so as to maintain FET 12 conducting. To return V3 to zero, V1 is lowered.

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IGFET Regenerative Source Follower

The addition of capacitor 10 allows large load voltages V3 to be controlled with an initially low gate voltage V2. Initially, V1 is close to zero volts while V2 is applied to the gate of FET 12 by closing switch 14. When the voltage across capacitor 10 reaches V2 in magnitude, switch 14 is opened. Then if the voltage V1 is increased, FET 12 starts conducting causing potential V3 to increase. The voltage at the gate of FET 12 increases with V3 as a result of capacitor 10 coupling the source of the FET to its gate. Thus, the potential difference is maintained between the gate and the source by capacitor 10 so as to maintain FET 12 conducting. To return V3 to zero, V1 is lowered.

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