Browse Prior Art Database

Capacitor Isolation Process

IP.com Disclosure Number: IPCOM000091646D
Original Publication Date: 1968-Apr-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 46K

Publishing Venue

IBM

Related People

Rodite, RR: AUTHOR

Abstract

With this ion etching or reverse sputtering technique, which can be applied to a variety of circuit manufacturing processes, a set of isolated capacitors is fabricated with fewer processing steps.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Capacitor Isolation Process

With this ion etching or reverse sputtering technique, which can be applied to a variety of circuit manufacturing processes, a set of isolated capacitors is fabricated with fewer processing steps.

In drawing A, glass substrate 1 supports etched metallic strips 2 that have been prepared by depositing the metal, applying a photoresist and ion etching the assembly. The photoresist is removed and a dielectric layer of silicon dioxide 3 is applied by forward sputtering. Conductive metal layer 4 is then deposited on the silicon dioxide by evaporation. The prepared assembly is next coated with a photoresist pattern of pads 5. The assembly is then ion-etched to the depth of strips 2 as in drawing B.

The combined etching of both layers 4 and 3 in one step through the use of an ion etching process eliminates registration problems between the pads and the dielectric material as well as eliminating the former Step of etching the dielectric before applying the conductive pads. Ion-etching has the inherent characteristic of removing material without undercutting.

1

Page 2 of 2

2

[This page contains 2 pictures or other non-text objects]