Browse Prior Art Database

Semiconductor Process to Prevent Aluminum Alloying

IP.com Disclosure Number: IPCOM000091651D
Original Publication Date: 1968-Apr-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 24K

Publishing Venue

IBM

Related People

Lloyd, RHF: AUTHOR

Abstract

Platinum silicide can be used to prevent aluminum patterns from alloying with a silicon semiconductor body. Silicon semiconductor body 1 has an active region 2. Aluminum layer 3 makes ohmic contact with region 2. At other locations, aluminum layer 3 is separated from body 1 by a layer of silicon dioxide 4.

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Semiconductor Process to Prevent Aluminum Alloying

Platinum silicide can be used to prevent aluminum patterns from alloying with a silicon semiconductor body. Silicon semiconductor body 1 has an active region 2. Aluminum layer 3 makes ohmic contact with region 2. At other locations, aluminum layer 3 is separated from body 1 by a layer of silicon dioxide
4.

In subsequent processing steps necessary for device fabrication and occurring at elevated temperatures, there is a problem of aluminum layer 3 alloying with body 1 through region 2. In order to solve this problem, platinum is initially deposited onto body 1 at areas where ohmic contact is desired.

Depositing the platinum at a temperature of 600-650 degrees C results in platinum silicide 5 being formed in situ. Aluminum layers subsequently deposited over the platinum silicide region 5 cannot migrate through such region at subsequent elevated temperatures.

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