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Browse Prior Art Database

Infrared Detector

IP.com Disclosure Number: IPCOM000091691D
Original Publication Date: 1968-Apr-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Brent, BA: AUTHOR [+3]

Abstract

The process for making an IRD Detector comprises the following steps: 1. Coat at least one side of an indium antimonide, single-crystal substrate with a suitable photoresist such as the type in which photopolymerization takes place. 2. Expose the photoresist to a photoimage of a desired detector pattern to produce polymerization. 3. Remove unpolymerized portions of photoresist by using a developer which dissolves the unpolymerized selected areas of the substrate while retaining the polymerized photoresist on the substrate. 4. Dip the coated substrate in a solution of palladium chloride PdCl(2) for 15 to 30 minutes at room temperature to form an even black palladium coating on the uncoated indium antimonide surface area. 5. Remove the polymerized photoresist by treating with a photoresist stripper solution. 6.

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Infrared Detector

The process for making an IRD Detector comprises the following steps: 1. Coat at least one side of an indium antimonide, single-crystal substrate with a suitable photoresist such as the type in which photopolymerization takes place.
2. Expose the photoresist to a photoimage of a desired detector pattern to produce polymerization. 3. Remove unpolymerized portions of photoresist by using a developer which dissolves the unpolymerized selected areas of the substrate while retaining the polymerized photoresist on the substrate. 4. Dip the coated substrate in a solution of palladium chloride PdCl(2) for 15 to 30 minutes at room temperature to form an even black palladium coating on the uncoated indium antimonide surface area. 5. Remove the polymerized photoresist by treating with a photoresist stripper solution. 6. After washing and drying, place the palladium-coated substrate in a sealed capsule having a dopant source of Cd doped polycrystalline InSb and heat to a temperature of 350 degrees C for four hours to provide a dopant vapor pressure of 4 x 10/-5/ torr.

In the areas not covered with the palladium mask, a P-region is formed while the masked areas retain N-region properties. Thus, a plurality of discrete PN junctions is formed on one surface of the substrate. The junctions are selectively operable as photodiodes sensitive to IR radiation. Electrical connection is made to the palladium material as well as to the end material of the substrate. Sc...