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Browse Prior Art Database

Producing Vapor for Silicon Oxidation Equipment

IP.com Disclosure Number: IPCOM000091716D
Original Publication Date: 1968-Apr-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 26K

Publishing Venue

IBM

Related People

Bernoth, E: AUTHOR [+3]

Abstract

An operational step frequently recurring during the production of semiconductors consists in the deposition of a very pure layer of silicon oxide on highly pure silicon wafers. Such silicon oxide layers are produced in most cases through the interaction of an atmosphere of purest vapor and the silicon chips to be oxidized in an oxidation oven.

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Producing Vapor for Silicon Oxidation Equipment

An operational step frequently recurring during the production of semiconductors consists in the deposition of a very pure layer of silicon oxide on highly pure silicon wafers. Such silicon oxide layers are produced in most cases through the interaction of an atmosphere of purest vapor and the silicon chips to be oxidized in an oxidation oven.

The vapor generation system consists of container 1 into which heater 2 protrudes. The latter, which is preferably made of quartz, can also be sealed in the wall of container 1, provided such is made of quartz. In order to keep the quantity of water to be heated low, container 1 is preferably conical. It is firmly connected to tube 3 through which highly pure water enters preferably from double-distillation device 5 made of quartz. Water, which is not used, is discharged via overflow 4 and can be collected for subsequent use. The height of overflow 4 governs the water level inside container 1.

Contrary to other vapor generation systems, consisting in the main of a container with three openings, one each for the heater, the pressure relief and the vapor outlet, this system comprises no ground-in stoppers sponsoring contamination. The vapor generation system lends itself particularly to automated operation.

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